NTMS7N03R2
Power MOSFET
7 Amps, 30 Volts
N?Channel SOIC?8
Features
? Ultra Low R DS(on)
? Higher Efficiency Extending Battery Life
? Logic Level Gate Drive
? Miniature SOIC?8 Surface Mount Package
? Avalanche Energy Specified
? I DSS Specified at Elevated Temperature
? Pb?Free Package is Available
Typical Applications
http://onsemi.com
7 AMPERES
30 VOLTS
R DS(on) = 23 m W
N?Channel
D
?
?
?
?
?
DC?DC Converters
Power Management
Motor Controls
Inductive Loads
Replaces MMSF7N03HD, MMSF7N03Z, and MMSF5N03HD
in Many Applications
G
S
MARKING
DIAGRAM
8
8
1
SOIC?8
CASE 751
STYLE 13
E7N03
AYWW G
G
1
A = Assembly Location
Y = Year
WW = Work Week
G
= Pb?Free Package
(Note: Microdot may be in either location)
PIN ASSIGNMENT
N?C
Source
Source
Gate
1
2
3
4
8
7
6
5
Drain
Drain
Drain
Drain
Top View
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
? Semiconductor Components Industries, LLC, 2005
June, 2005 ? Rev. 4
1
Publication Order Number:
NTMS7N03R2/D
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相关代理商/技术参数
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NTMSD2P102R2 功能描述:MOSFET P-CH 20V 2.3A 8-SOIC RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds(最大)@ Id, Vgs @ 25° C:180 毫欧 @ 9A,10V Id 时的 Vgs(th)(最大):4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件
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